Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications
نویسندگان
چکیده
منابع مشابه
Perpendicular-magnetic-anisotropy CoFeB racetrack memory
Related Articles Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy Appl. Phys. Lett. 100, 122405 (2012) Spin-torque diode spectrum of ferromagnetically coupled (FeB/CoFe)/Ru/(CoFe/FeB) synthetic free layer J. Appl. Phys. 111, 07C917 (2012) Characterization of interlayer interactions in magnetic random access memory layer stacks using ferr...
متن کاملPerpendicular Magnetic Anisotropy in Ion Beam
Co/Ni multilayers display perpendicular magnetic anisotropy and have applications in magnetic devices that could lead to a large increase in the density of magnetic storage. Co/Ni 10-(2 A Co/ 8A Ni) and 10-(2 A Co/ 4A Ni) multilayers were deposited with ion beam sputtering on either ion beam sputtered copper or direct current magnetron sputtered gold buffer layers of various thicknesses. The ef...
متن کاملProperties of magnetic nanodots with perpendicular anisotropy
Related Articles Demonstration of laser induced magnetization reversal in GdFeCo nanostructures Appl. Phys. Lett. 101, 022410 (2012) Tuning electronic and magnetic properties of zigzag graphene nanoribbons by large-scale bending Appl. Phys. Lett. 100, 263115 (2012) Magnetic and electronic properties of α-graphyne nanoribbons J. Chem. Phys. 136, 244702 (2012) Reduced spin transfer torque switchi...
متن کاملMagnetic Properties of Exchange-Biased Multilayer With Perpendicular Magnetic Anisotropy
Perpendicular exchange-biased and multilayers have been fabricated, changing the thickness of the cobalt that is next to the IrMn layer. The crystal structure, interface roughness and magnetic properties were characterized by X-ray diffraction (XRD), X-ray reflectivity (XRR), atomic force microscopy (AFM) and extraordinary Hall Effect (EHE). The multilayers are flat, and the roughness is about ...
متن کاملTunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges
Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM) has sparked a huge interest thanks to its non-volatility, fast a...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Reviews of Modern Physics
سال: 2017
ISSN: 0034-6861,1539-0756
DOI: 10.1103/revmodphys.89.025008